Knowledge Management System Of Qinghai Institute of Salt Lakes,CAS
Boron adsorption mechanism of a hybrid gel derived from tetraethoxysilane and bis(trimethoxysilylpropyl)amine | |
Liu, Haining1,2![]() ![]() ![]() ![]() ![]() ![]() | |
2009-07-01 | |
发表期刊 | CURRENT APPLIED PHYSICS
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卷号 | 9期号:4页码:E280-E283 |
关键词 | Boron Hybrid Gel Adsorption Mechanism |
摘要 | An organic/inorganic hybrid gel was prepared with tetraethoxysilane (TEOS) and bis(trimethoxysilylpropyl)amine (TSPA) as precursors. The adsorption of boron on the hybrid gel in aqueous solutions was investigated comprehensively by varying the initial boron concentration, pH, ionic strength, and temperature. The equilibrium adsorption amount of boron increases with the increase in initial boron concentration and ionic strength, but decreases with the increase in temperature. The adsorption amount exhibits a maximum at initial pH of 4-10. Boron appears to be adsorbed in both H3BO3 and B(OH)(4) forms through the hydrogen bonding, electrostatic and hydrophobic attractions. (C) 2009 Elsevier B.V. All rights reserved. |
语种 | 英语 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.isl.ac.cn/handle/363002/5879 |
专题 | 青海盐湖研究所知识仓储 盐湖资源与化学实验室 |
作者单位 | 1.Chinese Acad Sci, Qinghai Inst Salt Lakes, Key Lab Salt Lake Resources & Chem, Xining 810008, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 3.Yonsei Univ, Dept Chem & Biomol Engn, Seoul 120749, South Korea |
推荐引用方式 GB/T 7714 | Liu, Haining,Qing, Binju,Ye, Xiushen,et al. Boron adsorption mechanism of a hybrid gel derived from tetraethoxysilane and bis(trimethoxysilylpropyl)amine[J]. CURRENT APPLIED PHYSICS,2009,9(4):E280-E283. |
APA | Liu, Haining.,Qing, Binju.,Ye, Xiushen.,Guo, Min.,Li, Quan.,...&Lee, Kangtaek.(2009).Boron adsorption mechanism of a hybrid gel derived from tetraethoxysilane and bis(trimethoxysilylpropyl)amine.CURRENT APPLIED PHYSICS,9(4),E280-E283. |
MLA | Liu, Haining,et al."Boron adsorption mechanism of a hybrid gel derived from tetraethoxysilane and bis(trimethoxysilylpropyl)amine".CURRENT APPLIED PHYSICS 9.4(2009):E280-E283. |
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